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  MF200K06F3 document number: s-m0060 www. apt-semi .com rev.1.0, may.31, 2013 1 maximum ratings symbol conditions values units v r 600 v v rrm 600 v i f(av) t c =125c, per diode 100 a t c =125c, per moudle 200 a t c =125c, 20khz, per moudle 141 a i f(rms) t c =125c, per diode 141 a i fsm 1/2 cycle , 50hz, sine 2100 a 1/2 cycle , 60hz, sine 2350 a i 2 t t j =45c, t=10ms, 50hz, sine 22000 a 2 s t j =45c, t=8.3ms, 60hz, sine 27600 a 2 s p d 1400 w t j -40 to +150 c t stg -40 to +125 c torque recommended m6 3 4.7 nm torque recommended m6 3 4.7 nm weight 92 g thermal characteristics symbol conditions values units r th(j-c) per diode 0.09 /w fred modules v rrm 600v i fav 200 a applications y inversion welder y uninterruptible power supply (ups) y plating power supply y ultrasonic cleaner and welder y power factor correction (pfc) circuit y converter & chopper features y soft reverse recovery characteristics y ultrafast reverse recovery time y low reverse recovery loss y low forward voltage y high surge current capability y low inductance package circuit
MF200K06F3 document number: s-m0060 www. apt-semi .com rev.1.0, may.31, 2013 2 electrical characteristics performance curves fig3. reverse recovery current vs di f /dt fig4. reverse recovery charge vs di f /dt fi g 1. forward volta g e dro p vs forward current fig2. reverse recovery time vs di f /dt 0 di f /dt 500 a/us 1000 500 ns 400 300 200 100 trr 0 symbol conditions values units min. typ. max. i rm v r =600v -- -- 0.5 ma v r =600v, t j =125c -- -- 1 ma v f i f =100a -- 1.15 v i f =100a, t j =125c -- 1.0 v trr i f =1a, v r =30v, di f /dt=-200a/ s -- 48 -- ns trr v r =300v, i f =100a, di f /dt=-200a/ s, t j =25c -- 105 -- ns i rrm -- 10 -- a trr v r =300v, i f =100a, di f /dt=-200a/ s, t j =125c -- 200 -- ns i rrm -- 18 -- a 200 a 160 120 80 40 i f 0 0 v f 1 2 v 2.5 100 a 80 60 40 20 i rrm 0 0 di f /dt 500 a/us 1000 0 di f /dt 500 a/us 1000 5 uc 4 3 2 1 qrr 0
MF200K06F3 document number: s-m0060 www. apt-semi .com rev.1.0, may.31, 2013 3 package outline information case: f3 dimensions in mm fig5. dynamic parameters vs junction temprature fig6. transient thermal impedance 1.4 1.2 1 0.8 0.6 0.4 0.2 k f 0 0 t j 25 50 75 100 125 150 10 - 4 10 - 3 10 - 2 10 - 1 1 1 kw 10 -1 10 -2 10 -1 z thjc 1


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